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Defect induced lowering of activation energies at step bands in Co/Cu(100)

 

作者: S. T. Coyle,   M. R. Scheinfein,   James L. Blue,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 8  

页码: 912-914

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.120871

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Complex topological features such as rectangular voids and step inclusions that were seen in secondary electron micrographs of Co films grown on Cu(100) at room temperature were reproduced in Monte Carlo simulations in the presence of step bands. Lowered activation energies at defects such as steps, kinks, and vacancies enhance step edge restructuring during growth and upon annealing. This results in features such as faceted step edges, rectangular pits, incorporation of Co into terraces, surface alloying, and surface segregation. Simulated growth structures are directly compared with those observed in an ultrahigh vacuum scanning transmission electron microscope. ©1998 American Institute of Physics.

 

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