Ferroelectric memories (FeRAMs) are new types of memories especially suitable for mobile applications due to their unique properties like non-volatility, small DRAM-like cell size, fast read and write as well as low voltage/low power behavior. Although standard CMOS processes can be used for frontend and backend processes, FeRAM technology development has to overcome major challenges due to new materials used for capacitor formation. This work gives an overview of SrBi2Ta2O9(SBT) thin films capacitor processing using Pt as electrode material. The study describes in detail SBT formation using metal organic deposition (MOD) as well as influence of electrode thickness and capacitor patterning on SBT electrical properties. Also, results for integration of the capacitor process into a 0.5μm CMOS process with 2-layer tungsten/aluminum metallization as well as stacked capacitor results are given.