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Intrinsic carrier concentration and electron effective mass in Hg1−xZnxTe

 

作者: Yi-Gao Sha,   Ching-Hua Su,   S. L. Lehoczky,  

 

期刊: Journal of Applied Physics  (AIP Available online 1997)
卷期: Volume 81, issue 5  

页码: 2245-2249

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.364289

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The intrinsic carrier concentrations, Fermi energies, and the electron effective masses are calculated for Hg1−xZnxTe with 0<x⩽0.4 and 50 K⩽T⩽400 K. The numerical calculations are based on the Kanek⋅pmodel and no further analytical simplification or approximation is made for the energy band structure beyond those inherent in the Kane model. The results are compared to the previous calculations. ©1997 American Institute of Physics.

 

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