Intrinsic carrier concentration and electron effective mass in Hg1−xZnxTe
作者:
Yi-Gao Sha,
Ching-Hua Su,
S. L. Lehoczky,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 5
页码: 2245-2249
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364289
出版商: AIP
数据来源: AIP
摘要:
The intrinsic carrier concentrations, Fermi energies, and the electron effective masses are calculated for Hg1−xZnxTe with 0<x⩽0.4 and 50 K⩽T⩽400 K. The numerical calculations are based on the Kanek⋅pmodel and no further analytical simplification or approximation is made for the energy band structure beyond those inherent in the Kane model. The results are compared to the previous calculations. ©1997 American Institute of Physics.
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