Generation-recombination noise of junction-gate field-effect transistors
作者:
Waguih J.Boctor,
SheilaPrasad,
期刊:
Proceedings of the Institution of Electrical Engineers
(IET Available online 1974)
卷期:
Volume 121,
issue 12
页码: 1457-1459
年代: 1974
DOI:10.1049/piee.1974.0306
出版商: IEE
数据来源: IET
摘要:
The generation-recombination noise of junction-gate field-effect transistors is calculated taking into account the variable mobility. The field dependence of mobility suggested by Trofimenkoff is used, and the resultant spectral intensity of the drain-noise fluctuations shows no signs of a logarithmic singularity at saturation. The need for any cutoff procedure to remove the logarithmic singularity at saturation is therefore removed, and it is thus an improvement over earlier methods.
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