Growth temperature and substrate orientation dependences of moving emission and ordering in Ga0.52In0.48P
作者:
M. C. DeLong,
P. C. Taylor,
J. M. Olson,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 4
页码: 948-954
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584948
出版商: American Vacuum Society
关键词: VAPOR PHASE EPITAXY;TEMPERATURE DEPENDENCE;PHOTOLUMINESCENCE;ENERGY GAP;FILM GROWTH;GALLIUM PHOSPHIDES;INDIUM PHOSPHIDES;(GaIn)P;GaAs
数据来源: AIP
摘要:
The excitation intensity and temperature dependences of the photoluminescence (PL) from Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates have been investigated as a function of the epilayer growth temperature and the substrate misorientation from (100). The energy band gap is dependent on substrate temperature during growth but is effectively independent of substrate misorientation. A strong excitation intensity dependence of the PL is found to be a function of both substrate orientation and growth temperature. We postulate that the strong dependence of PL emission energy on excitation intensity in some samples may result from the sizes, shapes, and orientations of ordered domains.
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