Activation energy for thermal donor formation in silicon
作者:
M. Claybourn,
R. C. Newman,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 26
页码: 2197-2199
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98938
出版商: AIP
数据来源: AIP
摘要:
Czochralski silicon samples have been heated for increasing periods of time at temperatures of 395, 415, 450, 475, and 490 °C. At each stage infrared spectra of the electronic absorption of thermal donors TD2–TD9 were obtained with the samples at 4.2 K. The data for all the thermal donor centers can be presented on one universal plot, provided the concentration and time axes are simply scaled by factors that depend only on the temperature of heating. It is implied that the rate of formation of each center is limited by the same mechanism. An activation energy of 1.7±0.1 eV is determined for these processes.
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