Comment on ‘‘Temperature dependence of the barrier height of metal–semiconductor contacts on 6H‐SiC’’ [J. Appl. Phys.79, 301 (1996)]
作者:
C. Fro¨jdh,
C. S. Petersson,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 11
页码: 6570-6571
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363643
出版商: AIP
数据来源: AIP
摘要:
In this paper we comment on the interpretation ofCVdata in the presence of deep levels or interfacial layers. In order for the barrier height extracted fromCVmeasurements to be reliable, no frequency dependence should exist at the measurement frequencies, and the slope of the 1/C2vs voltage curve should not be temperature dependent. This is illustrated by data from Schottky barriers on 6H–SiC. ©1996 American Institute of Physics.
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