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Comment on ‘‘Temperature dependence of the barrier height of metal–semiconductor contacts on 6H‐SiC’’ [J. Appl. Phys.79, 301 (1996)]

 

作者: C. Fro¨jdh,   C. S. Petersson,  

 

期刊: Journal of Applied Physics  (AIP Available online 1996)
卷期: Volume 80, issue 11  

页码: 6570-6571

 

ISSN:0021-8979

 

年代: 1996

 

DOI:10.1063/1.363643

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In this paper we comment on the interpretation ofCVdata in the presence of deep levels or interfacial layers. In order for the barrier height extracted fromCVmeasurements to be reliable, no frequency dependence should exist at the measurement frequencies, and the slope of the 1/C2vs voltage curve should not be temperature dependent. This is illustrated by data from Schottky barriers on 6H–SiC. ©1996 American Institute of Physics.

 

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