Electroluminescence from Gunn domains in GaAs/AlGaAs heterostructure field‐effect transistors
作者:
Hans P. Zappe,
C. Moglestue,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 5
页码: 2501-2503
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346515
出版商: AIP
数据来源: AIP
摘要:
Electroluminescence from the drain‐edge of GaAs/AlGaAs heterostructure metal‐semiconductor field‐effect transistors under high applied drain bias is observed. The visible light emission is seen through Monte Carlo simulations to be correlated with Gunn domains in the sample, in which the high‐field region gives rise to both impact ionization current and the luminescent emission.
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