Optoelectronic modulation spectroscopy applied to the characterization of field effect transistors
作者:
Q. H. Wang,
J. G. Swanson,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 11
页码: 7011-7013
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.355059
出版商: AIP
数据来源: AIP
摘要:
Optoelectronic modulation spectroscopy has been applied to field effect transistors. Spectra include responses from bulk levels as well as from the continuum of states at the insulator‐semiconductor interface. States that are energetically deep in a continuum can be probed but would not be accessible to the Fermi level in an electrical measurement.
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