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Mass spectroscopy in ion implantation

 

作者: S. Matteson,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 2  

页码: 145-147

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582934

 

出版商: American Vacuum Society

 

关键词: ion implantation;ion beams;silicon ions;silicon fluorides;plasma;gallium arsenides;charge exchange;mass spectroscopy;beam monitoring;GaAs:(Si,Cr)

 

数据来源: AIP

 

摘要:

The principles of mass spectrometry are discussed and applied to the problem of assuring the purity of ion beam species in ion implantation. Experimental confirmation of various ion dissociation and charge exchange phenomena is presented for the case of a SiF4plasma used to produce Si ions for doping GaAs. Techniques for recognizing spurious ion species are explained.

 

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