首页   按字顺浏览 期刊浏览 卷期浏览 Built-in electric field assisted nucleation and coercive fields in ferroelectric thin f...
Built-in electric field assisted nucleation and coercive fields in ferroelectric thin films

 

作者: A.K. Tagantsev,   Cz. Pawlaczyk,   K. Brooks,   N. Setter,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1994)
卷期: Volume 4, issue 1  

页码: 1-12

 

ISSN:1058-4587

 

年代: 1994

 

DOI:10.1080/10584589408018654

 

出版商: Taylor & Francis Group

 

关键词: ferroelectric;PZT thin film;coercive field;depletion layer;built-in field

 

数据来源: Taylor

 

摘要:

A model of ferroelectric switching in thin films which also exhibit semiconducting properties is presented. The two principle assumptions upon which the model is based are (1) that the threshold field for reverse domain nucleation,Ecm, is much greater than the field required for domain wall motion,Ecm, and (2) that the electrode-film interface is modeled as a metal-semiconductor interface. A film thickness dependence of the coercive field is qualitatively predicted by the model. When applied to the experimentally determined thickness dependence of coercive field in lead-zirconate-titanate thin films, the model predicts a donor concentration,ND, of 1018cm−3and a space charge surface layer thickness,W, of 0.2 μm.

 

点击下载:  PDF (541KB)



返 回