Electrical properties of Ge‐dopedp‐type AlxGa1−xAs
作者:
S. Zukotynski,
S. Sumski,
M. B. Panish,
H. C. Casey,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 9
页码: 5795-5799
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.326721
出版商: AIP
数据来源: AIP
摘要:
The Hall effect and conductivity of Ge‐dopedp‐type AlxGa1−xAs has been studied in the temperature range from 77 to 500 K. The experimental results have been analyzed to yield the acceptor and donor concentration and the Ge activation energy. The samples have been found to be heavily compensated with an average compensation ratio of about 0.4. The activation energy was found to increase strongly with Al content forx<0.6 and to decrease with Ge concentration.
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