Microelectronic applications of ferroelectric films
作者:
V.I. Petrovsky,
A.S. Sigov,
K.A. Vorotilov,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1993)
卷期:
Volume 3,
issue 1
页码: 59-68
ISSN:1058-4587
年代: 1993
DOI:10.1080/10584589308216700
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The promising application of ferroelectric films as a gate dielectric in some microelectronic devices has been assessed. It is shown that the high dielectric constant of ferroelectrics allows improvement of device performance (amplification and power characteristics of MIS transistors and information amount transferred through the register of CCD). The requirements towards ferroelectric material and ferroelectric-semiconductor interface performance in ferroelectric non-volatile memories have been discussed. On the base of fluctuation theory of surface states it is supposed that the spontaneous polarization may induce additional traps on the ferroelectric-semiconductor interface.
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