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Characteristic properties of heating monocrystalline semiconductors by nanosecond laser pulses

 

作者: G.M. Gusakov,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1991）
卷期: Volume 116, issue 1-2  

页码: 159-164

 

ISSN:1042-0150

 

年代: 1991

 

DOI:10.1080/10420159108221355

 

出版商: Taylor & Francis Group

 

关键词: semiconductors;laser irradiation;optical properties

 

数据来源: Taylor

 

摘要:

The paper discusses the results of studying reflection dynamics from the surface of monocrystalline semiconductors Si, Ge, GaAs during irradiation by nanosecond (<102nsec) laser pulses (<1=0.53 μm, <2=1.06 μm) with incident energy density exceeding the semiconductrs melting threshold.

 

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