Long wavelength (1.3 &mgr;m) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region
作者:
Y. Qian,
Z. H. Zhu,
Y. H. Lo,
D. L. Huffaker,
D. G. Deppe,
H. Q. Hou,
B. E. Hammons,
W. Lin,
Y. K. Tu,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 1
页码: 25-27
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119459
出版商: AIP
数据来源: AIP
摘要:
We proposed and demonstrated a novel design for long wavelength (1.3 &mgr;m) vertical-cavity surface-emitting lasers (VCSELs). In this design, oxygen-implanted current-confinement regions were formed in a GaAs/AlGaAs Bragg reflector which is the bottom mirror wafer bonded to an AlGaInAs/InP cavity consisting of nine strain-compensated quantum wells. Room- temperature continuous-wave (cw) operation of 1.3 &mgr;m-VCSELs with a record low cw threshold current density of1.57 kA/cm2and a record low cw threshold current of 1 mA have been realized. ©1997 American Institute of Physics.
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