Single‐ and multiple‐energy Be, S, Si, and Ne ion implantations were performed at room temperature in InSb grown on semi‐insulating GaAs substrates. The implanted material was subjected to both isochronal and isothermal annealing schemes. The as‐implanted and annealed material was characterized by Hall, secondary ion mass spectrometry, and x‐ray rocking curve measurements. The as‐implanted material is highlyn‐type for all implant species used in this study. A maximump‐type activation of 90% andn‐type activation of 16% was achieved for Be and S implants, respectively. Be activation depends on the thickness of the InSb layer. No in‐diffusion of Be and S was observed even after 500 °C anneal. The Si implant has an amphoteric doping behavior.