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Experimental determination of transparency current density and estimation of the threshold current of semiconductor quantum well lasers

 

作者: T. R. Chen,   L. E. Eng,   Y. H. Zhuang,   A. Yariv,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 11  

页码: 1002-1004

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102598

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An experimental method for determining the transparency current density of semiconductor quantum well lasers is demonstrated in a strained‐layer InGaAs/GaAs single quantum well laser system. The experimental results are then used as a practical guide to the study of ultralow threshold lasers. A threshold current as low as 0.75 mA is observed.

 

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