Dynamics of barrier state electron self‐localization in InGaAs/InGaAsP multiple quantum well lasers
作者:
D. Finzi,
N. Tessler,
V. Mikhaelashvili,
G. Eisenstein,
A. G. Dentai,
S. Chandraskhar,
C. H. Joyner,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 18
页码: 2486-2488
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115829
出版商: AIP
数据来源: AIP
摘要:
We report details of lasing transitions based on self‐localized barrier state electrons in InGaAs/InGaAsP multiple quantum well lasers. We study the mechanisms responsible for the switching between conventional lasing transitions at 1460 nm and a self‐induced transition at 1360 nm. Carrier effects and current heating contribute both on a time scale of a few ns with the current heating dominating. Carrier effects are separable from the thermal effects when 100 ps wide electrical drive pulses are used. ©1996 American Institute of Physics.
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