Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films
作者:
H. Cao,
Y. G. Zhao,
H. C. Ong,
S. T. Ho,
J. Y. Dai,
J. Y. Wu,
R. P. H. Chang,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 25
页码: 3656-3658
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122853
出版商: AIP
数据来源: AIP
摘要:
A semiconductor laser whose cavities are “self-formed” due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission. ©1998 American Institute of Physics.
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