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Electrical properties of Y1-based ferroelectric gate MOS capacitors for nonvolatile memory applications

 

作者: K. Arita,   T. Otsuki,   Z. Chen,   M. Lim,   J.W. Bacon,   C.A. Paz De Araujo,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1999）
卷期: Volume 27, issue 1-4  

页码: 19-29

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908228452

 

出版商: Taylor & Francis Group

 

关键词: ferroelectric memories;MFSFETs;Y-1;memory window

 

数据来源: Taylor

 

摘要:

Ferroelectric gate MOS capacitors using the “Y-1” family of ferroelectric materials were evaluated. The capacitors were formed by connecting the ferroelectric capacitor and the MIS capacitor in series. The experimental results show the dependence of the memory window on the ferroelectric/insulator capacitance ratios, which gives some useful information on the design of MFSFETs.

 

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