Use of metal-oxide-semiconductor capacitors in the analysis of low-temperature epitaxial Si films deposited by remote plasma-enhanced chemical vapor deposition
作者:
R. Sharma,
J. L. Fretwell,
B. Doris,
S. Banerjee,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 5
页码: 2684-2689
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366085
出版商: AIP
数据来源: AIP
摘要:
This article discusses the electrical characterization of low-temperature intrinsic Si films deposited by remote plasma-enhanced chemical vapor deposition. Metal-oxide-semiconductor (MOS) capacitors were fabricated on films deposited over a range of temperatures. Conventional MOS measurements such as capacitance versus voltage, breakdown voltage, Zerbst plot, and charge-to-breakdown were used to analyze the capacitors. The results of these measurements not only yielded information about the electrical properties of the films, but also led to conclusions regarding structural quality and the presence of metal contamination. This, coupled with the fact that capacitor fabrication requires only a simple, moderate-thermal budget process, makes MOS capacitor measurements an attractive technique for the characterization of low temperature epitaxial Si films. ©1997 American Institute of Physics.
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