首页   按字顺浏览 期刊浏览 卷期浏览 Influence of high‐dose &ggr; irradiation on electron mobility in a silicon inver...
Influence of high‐dose &ggr; irradiation on electron mobility in a silicon inversion layer

 

作者: B. Majkusiak,   A. Jakubowski,   K. Grigorov,   A. Balasin´ski,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 57, issue 16  

页码: 1643-1644

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.104074

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An influence of high‐dose &ggr; irradiation on the dependence of electron mobility on transverse electric field in the silicon surface inversion layer is experimentally determined and considered.

 

点击下载:  PDF (193KB)



返 回