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Nanometer metal‐oxide‐semiconductor field‐effect transistors: A flexible tool for studying inversion layer physics

 

作者: P. M. Mankiewich,   R. E. Howard,   L. D. Jackel,   W. J. Skocpol,   D. M. Tennant,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 1  

页码: 380-382

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583337

 

出版商: American Vacuum Society

 

关键词: TRAPS;MOSFET;FABRICATION;SCATTERING;CHARGED−PARTICLE TRANSPORT;ELECTRIC POTENTIAL;SILICON;SILICA;WAFERS;INVERSION LAYERS;Si

 

数据来源: AIP

 

摘要:

The fabrication of multiterminal silicon MOSFET’s containing channel segments as narrow as 30 nm is described. These can be used for a variety of fundamental studies of quantum transport. In particular, in 100‐nm channels, spatially localized voltage measurements can be made probing the scattering effects of a single electron trap.

 

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