Spectroscopic ellipsometry study of glow‐discharge‐deposited thin films ofa‐Ge:H
作者:
J. R. Blanco,
P. J. McMarr,
K. Vedam,
R. C. Ross,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 10
页码: 3724-3731
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337582
出版商: AIP
数据来源: AIP
摘要:
Thin films ofa‐Ge:H with hydrogen contents ranging from 0 to 13 at. % prepared by the glow‐discharge process have been studied by spectroscopic ellipsometry. The resulting ellipsometric parameters have been analyzed by using standardn‐layer models, least‐squares regression analysis, and the Bruggeman effective media approximation theory. The results of the analyses show that the atomic percentage of hydrogen, in the amorphous binary alloy of Ge and H, can be represented by a void volume fraction in an effective medium approximation. These results are compared with those of infrared absorption spectroscopy. A good correlation between the percentage void determined from ellipsometry and the H content measured in thesea‐Ge:H films is found.
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