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P‐N JUNCTIONS AS ARTIFICIAL DIFFUSION BARRIERS FOR NATIVE DEFECTS

 

作者: M. Aven,   R. B. Hall,   W. Garwacki,  

 

期刊: Applied Physics Letters  （AIP Available online 1968）
卷期: Volume 13, issue 9  

页码: 292-295

 

ISSN:0003-6951

 

年代: 1968

 

DOI:10.1063/1.1652618

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A diffusion anomaly of a native acceptor defect in ZnSexTe1−xp‐njunctions is described. The diffusivities of this defect inn‐ andp‐type crystals at 575°C have been determined. The anomaly can be utilized in a triple‐diffusion technique of preparingp‐njunction diodes with improved electrical properties.

 

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