Interaction of hydrogen and thermal donor defects in silicon
作者:
A. Chantre,
S. J. Pearton,
L. C. Kimerling,
K. D. Cummings,
W. C. Dautremont‐Smith,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 9
页码: 513-515
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98144
出版商: AIP
数据来源: AIP
摘要:
We have studied the interaction of hydrogen with thermal donors in silicon using transient capacitance and current spectroscopy. We find that a large degree of thermal donor passivation (a factor of 40) can be achieved by hydrogen plasma exposure at 120 °C. The residual electrical activity is shown to arise from perturbedE(0.07) andE(0.15) donor states. Annealing at 200 °C almost completely reactivates the low concentration of thermal donors present in these samples. A model involving different incorporation sites for hydrogen is proposed to explain the results.
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