Electron trap center generation due to hole trapping in SiO2under Fowler–Nordheim tunneling stress
作者:
Hidetsugu Uchida,
Tsuneo Ajioka,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 6
页码: 433-435
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98413
出版商: AIP
数据来源: AIP
摘要:
The relation between generation of neutral electron trap centers and hole trapping in thermally grown SiO2under Fowler–Nordheim tunneling stress has been investigated. The experimental results show that the density of neutral electron trap centers is proportional to the density of trapped holes under Fowler–Nordheim tunneling stress with various electric fields and the total number of electrons injected into the oxide. The generation mechanism is explained by a model based on strained bonds.
点击下载:
PDF
(275KB)
返 回