首页   按字顺浏览 期刊浏览 卷期浏览 Thin Film Analysis by Means of Resonant Proton Capture Reactions
Thin Film Analysis by Means of Resonant Proton Capture Reactions

 

作者: K. P. Lieb,   W. Bolse,   T. Corts,   T. Kacsich,   A. Kehrel,   M. Uhrmacher,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1991)
卷期: Volume 238, issue 1  

页码: 983-993

 

ISSN:0094-243X

 

年代: 1991

 

DOI:10.1063/1.41186

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Resonant capture reactions are a versatile tool to measure concentration profiles of light elements in near‐surface layers. They allow us to monitor, with nanometer depth resolution, atomic transport processes caused by thermal diffusion, ion irradiation, nucleation and chemical forces. We have investigated properties of ion‐implanted super saturated Na solutions in metals by using the 309 keV23Na(p,&ggr;) resonance. Results on Na‐nucleation, outdiffusion and hydrogen decoration are presented; theH‐profiles were measured with the resonant1H(15N,a&ggr;) reaction. The second example refers to 30–300 nm magnetron sputtered TiN and Cr2N hard coatings irradiated with 100‐900 keV Ar, Kr and Xe ions. The resonant15N(p,a&ggr;) reaction served to monitor the composition of the coatings and ion‐induced surface sputtering and interface mixing effects.

 

点击下载:  PDF (526KB)



返 回