Sodium passivation in HCl oxide films on Si
作者:
A. Rohatgi,
S. R. Butler,
F. J. Feigl,
H. W. Kraner,
K. W. Jones,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 30,
issue 2
页码: 104-106
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89305
出版商: AIP
数据来源: AIP
摘要:
Chlorine has been incorporated into SiO2films by thermal oxidation of Si in a mixture of O2and HCl gases. Mobile sodium ions adsorbed on the oxide surface were drifted to the Si‐SiO2interface (0.5 MV cm−1bias at 200 °C). Passivation, defined as the fraction of mobile sodium charge neutralized, exhibited a pronounced threshold with HCl content in the growth ambient. This was partly due to a similar variation of oxide chlorine content (measured by &agr;‐particle backscattering). For fixed growth temperature, passivation was a monotonic function of oxide chlorine content, and was only weakly dependent on the level of sodium contamination over the range 5×1011to 1×1013Na/cm2.
点击下载:
PDF
(230KB)
返 回