Remote plasma chemical vapor deposition silicon oxynitride thin films: Dielectric properties
作者:
M. Hernández Vélez,
O. Sánchez Garrido,
F. Fernández Gutiérrez,
C. Falcony,
J. M. Martı́nez Duart,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 3
页码: 1087-1092
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590013
出版商: American Vacuum Society
关键词: Si(O,N)
数据来源: AIP
摘要:
Silicon oxynitride thin films have been deposited using remote plasma chemical vapor deposition fromSiCl4+NH3+O2gas mixtures. The stoichiometry of the deposited films varies from that corresponding to the silicon oxide to a stoichiometry very close to silicon nitride when theNH3/O2gas ratio is changed in the plasma. The approximate compositions of the films were determined by Rutherford backscattering spectroscopy and nuclear reaction analysis, and the local bonding arrangements were determined by infrared spectroscopy. Analysis of metal–insulator–semiconductor devices under the effect of and external sinusoidal electric field (dielectric spectrometry) indicates the presence of traps centers in theSi–SiO2interface. Correlations between the local bonded structures in the oxynitride and the conduction and polarization processes detected in the films are also discussed.
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