The possibility of making a shift register using an array ofp+-i-n+diodes has been examined by investigating the transfer action of the on state of negative resistance characteristics between closely spacedp+-i-n+diodes. A gold-doped Si substrate is used to fabricate thep+-i-n+structure. The possibility of the transfer of the on state has been examined. The main requirements for transferring are as follows: (a) The array of diodes must be located within about 500 µm in lateral length, (b) The operation time of the transfer action must be within about 10µs. To clarify the transfer mechanism, experiments concerning the effect of carrier diffusion, Joule heat and recombination radiation due to on state current from one diode to the adjacent diode have been carried out. From the experimental results, it has been found that the transfer mechanism is dominated by carrier diffusion from the filamentary current path of one diode to the next.