Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation
作者:
Jun Matsui,
Mari Shibata,
Nobuhiko Nakano,
Toshiaki Makabe,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1998)
卷期:
Volume 16,
issue 1
页码: 294-299
ISSN:0734-2101
年代: 1998
DOI:10.1116/1.580985
出版商: American Vacuum Society
数据来源: AIP
摘要:
Anomalous etching, caused by the local charging of a patterned wafer surface immersed in a plasma, is one of the obstacles which must be overcome in plasma processing. We have developed a quantitative argument for the potential control of both the fluxes and the velocity components of charged particles on the wafer in a pulsed radio frequency plasma with a short off-cycle in SF6. We have then used relaxation continuum/Boltzmann equation model to create a phase-space model.
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