首页   按字顺浏览 期刊浏览 卷期浏览 Depth dependence of angular dips: Measurements and calculations for H+and D+in Si and Ge
Depth dependence of angular dips: Measurements and calculations for H+and D+in Si and Ge

 

作者: S.U. Campisano,   G. Foti,   F. Grasso,   I.F. Quercia,   E. Rimini,  

 

期刊: Radiation Effects  （Taylor Available online 1972）
卷期: Volume 13, issue 1-2  

页码: 23-31

 

ISSN:0033-7579

 

年代: 1972

 

DOI:10.1080/00337577208231157

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The variation of shape of angular dips with penetration depth has been investigated by the backscattering technique for 0.3 to 1.5 MeV protons and deuterons impinging on Si and Ge single crystals at different temperatures.

 

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