High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
作者:
Ozgur Aktas,
Z. F. Fan,
S. N. Mohammad,
A. E. Botchkarev,
H. Morkoc¸,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 25
页码: 3872-3874
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117133
出版商: AIP
数据来源: AIP
摘要:
Current–voltage characteristics of AlGaN/GaN modulation doped field‐effect transistors at elevated temperatures are studied experimentally. The drain–source current and extrinsic transconductance are both found to decrease with increasing temperature. Decrease in mobility with increasing temperatures is considered to be one of the causes of the reduction in the current and transconductance. The capacitance–voltage characteristic reveals the absence of heat activated traps in the modulation doped layer. The physics underlying various high‐temperature operations of current–voltage characteristics is discussed. ©1996 American Institute of Physics.
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