Interaction of amorphous MoNixalloys with silicon
作者:
R. S. Rastogi,
V. D. Vankar,
K. L. Chopra,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 4
页码: 1868-1873
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345615
出版商: AIP
数据来源: AIP
摘要:
The interaction of amorphous MoNixalloys with silicon has been investigated by glancing‐angle x‐ray diffraction, Auger‐electron spectroscopy, and sheet‐resistance measurements in the temperature range 500–700 °C. Mo‐rich alloys (Mo80Ni20and Mo65Ni35) were found to react with silicon at ∼550 °C while nickel‐rich alloys (Mo32Ni68) react at ∼500 °C to form silicides. In Mo‐rich alloys, the initial reaction occurs due to out‐diffusion of nickel from the alloy and in‐diffusion of silicon into the alloy, while in nickel‐rich alloys the initial reaction occurs due to out‐diffusion of nickel only. In the initial phase of the reaction, a mixture of several crystalline phases of molybdenum and molybdenum and nickel silicides is observed. At higher temperature, however, a two‐layer structure MoSi2+NiSi(NiSi2)/ NiSi(NiSi2)/ Si(100) is formed in both cases.
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