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X‐Pinch in High‐Current Diode

 

作者: B. A. Bryunetkin,   A. Ya. Faenov,   G. V. Ivanenkov,   S. Ya. Khakhalin,   A. R. Mingaleev,   S. A. Pikuz,   V. M. Romanova,   T. A. Shelkovenko,   I. Yu. Skobelev,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1994)
卷期: Volume 299, issue 1  

页码: 587-595

 

ISSN:0094-243X

 

年代: 1994

 

DOI:10.1063/1.2949209

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The review of X‐pinch investigations in high current diode of BIN facility (250 kA, 100 ns) is presented. The main purposes were to investigate pinch forming processes and hot dense plasma properties. X‐pinch is also considered as a source for multiple charged ions spectroscopy and for X‐ray optics testing. The set of diagnostics applied in these experiments allowed us to investigate the pinch forming processes in different configurations of crossed wires loads. High spectral and space resolved measurements of plasma radiation in 1–200 Å range, absolute energy measurements and electron beam registration were provided. Plasma parameters were obtained from relative intensities and shapes of multiple charged ions spectral lines. Electron density of plasma with the temperatureTe = 0.2–1 keVvariated from 1023cm−3in hot spot to 1018cm−3during plasma expansion. In recombining plasma, an inversion of Al He‐like ions levels population was registrated. Total radiation output of 0.5 mm pinch reached hundreds Joules in 2–100 Å range during 100 ns.

 

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