We have examined epitaxial InSb films by Raman scattering for the first time. The films, 0.17–2.67 &mgr;m thick, were grown on (100) GaAs substrates by the new technique of metalorganic magnetron sputtering. We observe the first and second order longitudinal optical phonon peaks, the latter enhanced by outgoing resonance with theE1+&Dgr;1gap of InSb, and an upshift of this gap due to compressive biaxial stress. We also observe an anomalous dependence of stress on film thickness. The Raman data indicate good sample quality despite the large lattice mismatch between InSb and GaAs.