Influence of electron-beam induced microporosity on masking properties of polymethylmethacrylate in wet etching of nanometer structures
作者:
I. Maximov,
A. L. Bogdanov,
L. Montelius,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 6
页码: 2921-2924
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589755
出版商: American Vacuum Society
关键词: PMMA
数据来源: AIP
摘要:
The masking properties of nanometer scale polymethylmethacrylate (PMMA) features used for definition of sub-100-nm-wide bridges inInP/Ga0.25In0.75Astwo-dimensional electron gas heterostructures by wet etching were investigated. Bridges untreated after the development of PMMA showed very poor masking ability due to a substantial exposure by backward scattered electrons from the surrounding exposed areas. However, if the resist was post-baked after development at a temperature higher than the glass transition temperature,Tg,the masking properties were restored and wet etched nanobridges of a sufficient quality were obtained. The post-development bake temperature and time were optimized to provide enough resist “packing” and yet not to cause resist flowing resulting in unacceptable alteration of the pattern geometry.
点击下载:
PDF
(1089KB)
返 回