We report on the intentionaln‐type doping of the diluted magnetic semiconductor Zn1−xMnxSe using ZnCl2as the dopant source. Samples with varying Mn concentrations and carrier densities were grown by molecular beam epitaxy and characterized using Hall effect, x‐ray diffraction, and photoluminescence measurements. Net carrier concentrations in excess of 1018cm−3are readily obtained forx≤0.08. Useful carrier densities can be achieved for Mn concentrationsx≤0.15, above which the samples are highly insulating. The controlled doping of this alloy provides another material for use in the fabrication of wide gap semiconductor device structures. ©1995 American Institute of Physics.