The Rutherford backscattering (RBS) technique has been used to determine the range profiles of Ar+implanted into polymer LPPS ([(C6H5)8Si8O12]n) film at energies of 50, 70, 90, 100, 120, 150 and 170 keV. It is found that the range profiles are Gaussian, and the experimental projected ranges are in a good agreement with the theoretical values calculated by TRIM'89 code at energies below 120 keV. As for range straggling, the experimental values are higher than the prediction values. In addition, a variation in the implantation dose from 5 × 1015to 1 × 1017ions/cm2at 50 keV does not affect the projected range, but the range straggling increases with the increasing implanted dose. The results of the implantation of Ar+in polymer PVA ([C2H4O]n) and PAM ([C3H5ON]n) show that the implant Ar is released instantly during ion implantation.