Low‐temperature organometallic vapor phase epitaxial growth of CdTe using a new organotellurium source
作者:
D. W. Kisker,
M. L. Steigerwald,
T. Y. Kometani,
K. S. Jeffers,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 23
页码: 1681-1683
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97766
出版商: AIP
数据来源: AIP
摘要:
The growth of CdTe by organometallic vapor phase epitaxy has been accomplished at 250 °C, using a new tellurium source, dimethylditelluride. The compound decomposes at a much lower temperature than the corresponding monotelluride, apparently by reacting with a cadmium‐containing species to eliminate one tellurium atom. As a result, the temperature necessary for deposition of CdTe has been lowered from the range of 400 °C, thus making completely thermally driven chemical vapor deposition of II‐VI compounds possible at much lower temperatures.
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