The use of all‐gaseous doping during chemical‐beam epitaxy (CBE) offers several important advantages. Injection of dopants, together with the metalorganic group‐III beam, automatically leads to uniform dopant distribution across the entire wafer. Vapor dopant sources also ensure long‐term stability and reproducibility. It also allows for instant doping profile control. Most important of all, an all‐gaseous doping CBE system is particularly attractive for system manufacture and device production applications. We investigatedn‐ andp‐type dopings in InP and InGaAs during CBE using tetraethyltin (TESn) and diethylzinc (DEZn), respectively, and confirmed their suitability for use in growing high‐quality long‐wavelength InGaAs(P)/InGaAsP semiconductor injection lasers. Buried heterostructure lasers fabricated from CBE‐grown 1.5‐&mgr;m six quantum‐well base wafers and metalorganic vapor‐phase‐epitaxy regrown iron‐doped InP have excellent current‐voltage characteristics and threshold currents as low as 8 mA. cw operation with threshold current as low as 23 mA at 80 °C and output power of ∼10 mW was achieved for diodes having one facet ∼85% reflective coated.