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Chemical beam epitaxy of InP‐based solar cells and tunnel junctions

 

作者: M. F. Vilela,   V. Rossignol,   A. Bensaoula,   N. Medelci,   A. Freundlich,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 2  

页码: 1251-1253

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587014

 

出版商: American Vacuum Society

 

关键词: INDIUM PHOSPHIDE SOLAR CELLS;TUNNEL DIODES;INDIUM ARSENIDES;GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;SILICON ADDITIONS;BERYLLIUM ADDITIONS;PERFORMANCE;TEMPERATURE RANGE 0400−1000 K;InP:Be;(In,Ga)As:Si;(In,Ga)As:Be;InPP:Si

 

数据来源: AIP

 

摘要:

Chemical beam epitaxy has been utilized to demonstrate high efficiency InGaAs/InP tandem solar cells on InP substrates. The key development in achieving such tandems is the growth of high peak current density InGaAs tunnel junctions for use as interconnect between the top and bottom cells. The growth and performance of the InGaAs bottom cell, the InGaAs tunnel junction, and the InP top cell are first independently presented in the paper. Then the growth of an InP‐based tandem cell is described followed by a discussion of its performance.

 

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