Assessment of Fe‐doped semi‐insulating InP crystals by scanning photoluminescence measurements
作者:
J. Y. Longe`re,
K. Schohe,
S. K. Krawczyk,
R. Coquille,
H. L’Haridon,
P. N. Favennec,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 2
页码: 755-759
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346780
出版商: AIP
数据来源: AIP
摘要:
Room‐temperature scanning photoluminescence (SPL) measurements were performed on Fe‐doped semi‐insulating InP wafers obtained from various suppliers. It was found that defects and inhomogeneities such as short‐ and long‐range doping striations, dislocations, and subsurface extended defects are associated with specific ‘‘signatures’’ in SPL images, regardless of the origin of the samples. Because SPL measurements are fast and nondestructive, they appear to be useful for the evaluation of this material.
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