Pure and conductingRuO2thin films were deposited on a Si substrate at 250–450 °C usingRu(C11H19O2)3as a precursor by low pressure metal organic chemical vapor deposition (MOCVD). At a lower deposition temperature, the smoother and denserRuO2thin films were deposited. The amount ofO2addition did not seriously affect the properties of theRuO2thin film. TheRuO2thin films which were crack free and well adhered onto the substrates showed very low resistivity of 45–60 μΩ cm. At a lower deposition temperature and a smaller amount ofO2addition,RuO2thin films showed better step coverage, indicating that MOCVDRuO2thin films fromRu(C11H19O2)3can be applied for an electrode of high dielectric thin films for a capacitor of ultralarge scale integrated dynamic random access memory.