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Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C

 

作者: S. A. McQuaid,   R. C. Newman,   J. H. Tucker,   E. C. Lightowlers,   R. A. A. Kubiak,   M. Goulding,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 25  

页码: 2933-2935

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104726

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Boron‐doped Czochralski silicon samples with [B]∼1017cm−3have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H‐B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3at the temperatures investigated.

 

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