首页   按字顺浏览 期刊浏览 卷期浏览 Studies on the 1831 cm−1SiH band in NTD c-Si containing H
Studies on the 1831 cm−1SiH band in NTD c-Si containing H

 

作者: M.W. Qi,   T.S. Shi,   Y.G. Zhao,   P.X. Cai,   J.J. Gao,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1989）
卷期: Volume 111-112, issue 1-2  

页码: 375-380

 

ISSN:1042-0150

 

年代: 1989

 

DOI:10.1080/10420158908213010

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The dose dependence and annealing behavior of the 1831 cm−1SiH band in NTD c-Si containing H have been studied via FTIR. The annealing kinetics has been found to be of first order with the activation energy equal to 1.45+−0.1 eV. The possible models for this SiH band have been discussed.

 

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