A strong ⟨100⟩ texture has been achieved in cw neodymium:yttrium aluminum garnet laser recrystallization of the 700 °C low pressure chemical vapor deposited (LPCVD) polycrystalline silicon films which exhibit ⟨100⟩ preferred orientation. When ⟨110⟩ texture is dominant in as‐deposited films, the ⟨100⟩ texture is not so strong as in the 700 °C LPCVD films. The dependence of the ⟨100⟩ texture on as‐deposited film structure implies that the ⟨100⟩ grain growth occurs under such a melting condition as the initial film structure is partially maintained.