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Native grown plasma oxides and inversion layers on InGaAs

 

作者: B. Tell,   R. E. Nahory,   R. F. Leheny,   J. C. De Winter,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 39, issue 9  

页码: 744-746

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92877

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Native plasma oxides which are water insoluble have been grown on bothn‐ andp‐type epilayers of In0.53Ga0.47As. For each case, capacitance‐voltage measurements show that the surfaces can be varied from strong accumulation to strong inversion. The oxide resistivity is of order 1012&OHgr; cm, while the breakdown field is of order 106V/cm.

 

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