Active Oxidation of SiC‐Based Ceramics in Ar–2% Cl2‐O2Gas Mixtures at 1000°C
作者:
Sik Y. Ip,
Michael J. McNallan,
Dong S. Park,
期刊:
Journal of the American Ceramic Society
(WILEY Available online 1992)
卷期:
Volume 75,
issue 7
页码: 1942-1948
ISSN:0002-7820
年代: 1992
DOI:10.1111/j.1151-2916.1992.tb07221.x
出版商: Blackwell Publishing Ltd
关键词: silicon carbide;oxidation;argon;chlorine;oxygen
数据来源: WILEY
摘要:
The corrosion in Ar–2% CI2gas mixtures of four low‐cost SiC‐based materials suitable for use in high‐temperature heat exchangers has been invesigated. The oxygen potential was controlled by addition of O2or H2at 1000°C. Little attack was observed in the reducing environment composed of Ar–2% Cl2–1% H2or the oxidizing environment composed of Ar–2% Cl2–20% O2but all of the materials were subject to active corrosion at intermediate oxygen potentials. Selective attack of the free silicon phase was obsrved for the siliconized silicon carbide materials. The severity of the active oxidation and the oxygen potentital at which the corrosion changed from active to passive were affected by the nature of the sintering aids used
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